| PART |
Description |
Maker |
| MCM40256 MCM40256S10 MCM40256S70 MCM40256S80 MCM40 |
256K x 40 Bit Dynamic Random Access Memory Module 256K X 40 FAST PAGE DRAM MODULE, 70 ns, SMA72
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
|
| HM514800LJP-7 HM514800LJP-10 HM514800LZP-10 HM5148 |
70ns; V(cc): -1 to 7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory
100ns; V(cc): -1 to 7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory
|
Hitachi Semiconductor
|
| AK5321024N |
Dynamic Random Access Memory
|
ACCUTEK MICROCIRCUIT CO...
|
| AK5321024BW09 |
Dynamic Random Access Memory
|
ACCUTEK MICROCIRCUIT CORPORATION
|
| AK48256G |
Dynamic Random Access Memory
|
ACCUTEK MICROCIRCUIT CO...
|
| HYB3164165BT-40 HYB3165165BT-40 HYB3166165BT-40 HY |
4M x 16-Bit Dynamic RAM 4M X 16 EDO DRAM, 60 ns, PDSO50
INDUCTOR CHIP .10UH 5% 0805 SMD 4M X 16 EDO DRAM, 60 ns, PDSO50
4M x 16-Bit Dynamic RAM 4M X 16 EDO DRAM, 40 ns, PDSO50
|
http://
SIEMENS A G
SIEMENS AG
|
| HM5118165A HM5118165AJ-7 HM5118165AJ-8 HM5118165AT |
1048576-word x 16-bit Dynamic Random Access Memory
|
HITACHI[Hitachi Semiconductor]
|
| MCM40512S10 MCM40L512S10 MCM40512 MCM40512S70 MCM4 |
512K x 40 Bit Dynamic Random Access Memory Module
|
MOTOROLA[Motorola, Inc]
MOTOROLA INC
|
| HM5117400BS-6 HM5117400BS-7 HM5117400BS-8 HM511740 |
4194304-WORD X 4-BIT DYNAMIC RANDOM ACCESS MEMORY
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| HYB5118165BST-60 HYB5118165BST-50 HYB5118165BSJ-60 |
1M x 16 Bit 1k 5 V 60 ns EDO DRAM
1M x 16 Bit 1k 3.3 V 60 ns EDO DRAM
1M x 16 Bit 1k 5 V 50 ns EDO DRAM
-1M x 16-Bit Dynamic RAM 1k Refresh
1M x 16 Bit 1k 3.3 V 50 ns EDO DRAM
1M x 16-Bit Dynamic RAM 1k Refresh (Hyper Page Mode-EDO)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| TMS626162A |
524288 BY 16-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY
|
http://
|
